STEM-EELS investigation of c-Si/a-AlO interface for solar cell applications

In this article, STEM-EELS methodology is described to investigate the composition of sensitive crystalline Silicon/amorphous aluminum oxide (c-Si/a-AlOx) interface an a AlOx/amorphous hydrogenated silicon nitride (a-AlOx/a-SiNx:H) passivation stack c-Si solar cell. stack, a-AlOx has distinctive characteristic provide both chemical and field effect passivation, which need further research be more controlled in order improve cell efficiency. known unstable under electron-beam, so we first present detailed study on electron-beam radiation damage c-Si/a-AlOx interface. This can indeed undergo several irradiation like sputtering, knock-on or radiolysis if precautions are not taken. Radiolysis been found dominant damage. Thus, acquisition parameters acceleration voltage, electron dose scan orientation were taken into account modified limit Once was limited, investigation conduct using DualEELS Si Al L2,3 OK edge fines structures. The composed a-SiOx non-stoichiometric silicate with predominance tetrahedrally coordinated its layer.